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| SI7898DP New Product Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) 0.085 @ VGS = 10 V 0.095 @ VGS = 6.0 V ID (A) 4.8 4.5 D TrenchFETr Power MOSFET for Fast Switching D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Power Supply Primary Side Switch D Automotive and Industrial Motor Drives PowerPAKt SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 150 "20 4.8 Steady State Unit V 3.0 2.4 25 10 A ID IDM IAS IS PD TJ, Tstg 3.8 4.1 5.0 3.2 -55 to 150 1.6 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71873 S-20827--Rev. A, 17-Jun-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 20 52 2.1 Maximum 25 65 2.6 Unit _C/W C/W 1 SI7898DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V VDS = 120 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.5 A rDS(on) VGS = 6.0 V, ID = 3.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 5 A IS = 2.5 A, VGS = 0 V 25 0.068 0.076 15 0.75 1.2 0.085 0.095 W S V 2.0 4.0 "100 1 5 V nA mA m A Symbol Test Condition Min Typ Max Unit Drain-Source On-State Resistancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = 2.5 A, di/dt = 100 A/ms VDD = 75 V, RL = 21 W ID ^ 3.5 A, VGEN = 10 V, RG = 6 W VDS = 75 V, VGS = 10 V, ID = 3.5 A 17 3.2 6.0 9.0 10 24 17 0.85 45 70 14 15 35 25 W ns ns 21 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 10 thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 25 Transfer Characteristics 15 5V 10 15 10 TC = 125_C 5 25_C 5 3, 4 V 0 0 2 4 6 8 10 0 0 1 2 3 4 -55_C 5 6 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71873 S-20827--Rev. A, 17-Jun-02 2 SI7898DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( W ) 1200 Vishay Siliconix Capacitance C - Capacitance (pF) 0.12 900 Ciss 0.09 VGS = 6 V 600 0.06 VGS = 10 V 0.03 300 Crss Coss 0.00 0 5 10 15 20 25 0 0 30 60 90 120 150 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 20 V GS - Gate-to-Source Voltage (V) VDS = 75 V ID = 3.5 A 16 3.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A r DS(on) - On-Resistance ( W) (Normalized) 12 18 24 30 2.5 2.0 12 1.5 8 1.0 4 0.5 0 0 6 Qg - Total Gate Charge (nC) 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.25 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.20 ID = 3.5 A 0.15 I S - Source Current (A) TJ = 150_C 10 0.10 TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71873 S-20827--Rev. A, 17-Jun-02 www.vishay.com 3 SI7898DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 200 Single Pulse Power, Juncion-To-Ambient 0.5 V GS(th) Variance (V) 160 ID = 250 mA Power (W) 120 0.0 -0.5 80 -1.0 40 -1.5 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area 100 10 ms 10 I D - Drain Current (A) Limited by rDS(on) 100 ms 1 1 ms 10 ms 100 ms 1s 10 s 0.1 TC = 25_C Single Pulse 0.01 0.01 0.1 1 10 100 100 s, dc 1000 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = _C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71873 S-20827--Rev. A, 17-Jun-02 SI7898DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71873 S-20827--Rev. A, 17-Jun-02 www.vishay.com 5 |
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